| Manufaurer: | Fairchild Semiconduor | |
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| RoHS: |  Details | |
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| Produ: | General Purpose MOSFETs | |
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| Transistor Polarity: | N-Channel | |
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| Drain-Source Breakdown Voltage: | 600 V | |
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| Continuous Drain Current: | 12 A | |
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| Power Dissipation: | 51000 mW | |
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| Forward Transconduance gFS (Max / Min): | 13 S | |
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| Resistance Drain-Source RDS (on): | 0.65 Ohm @ 10 V | |
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| Tical Turn-Off Delay Time: | 155 ns | |
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| Gate-Source Breakdown Voltage: | + /- 30 V | |
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| Maximum Operating Temperature: | 150 C | |
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| Minimum Operating Temperature: | - 55 C | |
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